Stack bank type semiconductor memory apparatus capable of improving alignment margin

ABSTRACT

A semiconductor memory apparatus is capable of improving the alignment margin for a bank and sufficiently ensuring a space for forming a global input/output line. The semiconductor memory apparatus includes a stack bank structure having at least two sub-banks continuously stacked without disconnection of data signal lines, and a control block arranged at one side of the stack bank structure to simultaneously control column-related signals of the sub-banks.

CROSS-REFERENCES TO RELATED APPLICATION

The present application claims priority under 35 U.S.C. 119(a) to Koreanapplication numbers 10-2007-0114146 filed on Nov. 9, 2007,10-2007-0114944 filed on Nov. 12, 2007 and 10-2007-0115462 filed on Nov.13, 2007 in the Korean Intellectual Property office, each of which isincorporated by reference in its entirety as if set forth in full.

BACKGROUND

1. Technical Field

The embodiments described herein relate to a stack bank typesemiconductor memory apparatus, and more particularly, to asemiconductor memory including a plurality of banks having a pluralityof sub-banks.

2. Related Art

A conventional semiconductor memory apparatus includes a plurality ofmemory cells and a circuit for controlling the memory cells. At present,a bank concept has been introduced to control a plurality of memorycells by classifying the memory cells into groups. A bank represents anarea that includes a plurality of memory cells. The memory cells aregrouped into banks and controlled to improve the signal transmissioncharacteristics of the semiconductor memory apparatus.

Recently, as the number of memory cells included in semiconductor memoryapparatus has increased significantly, a multi-bank scheme has beenproposed to control banks by dividing the banks into sub-banks.

FIG. 1 is a plan view illustrating a conventional semiconductor memoryapparatus employing such a multi-bank scheme. Referring to FIG. 1, asemiconductor chip 10 may be divided into four banks 12 a to 12 d. Thebanks 12 a to 12 d are spaced apart from each other and a peripheralarea 14 is interposed therebetween. For example, each of the banks 12 ato 12 d may be divided into an up bank UP and a down bank DOWN about ahalf line HL. Each up bank may be divided into four sub-banks 15 andeach down bank may also be divided into the four sub-banks 15.

Each sub-bank 15 includes a plurality of word lines, a plurality of bitlines crossing the word lines, and a plurality of memory cells definedby the word and bit lines. The word and bit lines may extend in the yand x directions of FIG. 1.

At the present time, the semiconductor memory apparatus performshierarchical data input/output. To this end, the semiconductor memoryapparatus employs a plurality of data bus lines. A conventionalsemiconductor memory apparatus hierarchically transfers data, which isloaded on a bit line, to a sub-input/output (SIO, not shown) line, alocal input/output (LIO, not shown) line, and a global input/output(GIO, not shown) line. The global input/output line is arranged betweenthe sub-banks 15 perpendicular to the extension direction of the bitline.

Further, Y-control blocks 20 are arranged between the sub-banks 15adjacent to the global input/output line to control a ‘Yi’ signal of acorresponding sub-bank 15, respectively. Furthermore, an X-hole 25,which includes circuits used for driving the word line, is arrangedbetween the sub-banks 15 perpendicular to the Y-control block 20.

FIG. 2 is an enlarged plan view illustrating one bank in FIG. 1. AS canbe seen, one fuse set 23 is installed in each sub-bank 15 to repair amemory cell defect occurring between the Y-control block 20 and theglobal input/output line. Further, circuits (not shown) are arranged inthe peripheral area 14 to control the banks 12.

Each bank 12 a of the semiconductor chip 10 receives commands andsignals from the control circuits arranged in the peripheral area 14.However, the number of memory cells integrated in the banks 12 isincreased due to the increase in the integration degree of conventionalsemiconductor memory apparatus. The increased number of memory cellsincreases the area of the sub-banks 15 and the area of the banks 12including the sub-banks 15. In addition, the area of the blocks 20 and25, which control the banks 12, must also increase.

Therefore, the alignment margin between the banks 12 is insufficient,and a sufficient gap between the sub-banks 15 may not be sufficientlyensured. The reduction in the gap between the sub-banks 15 may cause areduction in the line width and spacing related to the globalinput/output line. The reduction in the spacing related to the globalinput/output line causes crosstalk, and the reduction in the line widthof the global input/output line causes a signal delay.

SUMMARY

A semiconductor memory apparatus capable of improving the alignmentmargin for a bank is described herein. A semiconductor memory apparatuscapable of sufficiently ensuring a space for forming a globalinput/output line is also described herein.

According to one aspect, a semiconductor memory apparatus includes astack bank structure having at least two sub-banks continuously stacked,and a control block arranged at one side of the stack bank structure tosimultaneously control column-related signals of the sub-banks. Whereinthe data signal lines of the sub-banks for constructing the stack bankstructure, which receive the same signal, are continuously connectedeach other.

According to another aspect, a semiconductor memory apparatus includes aplurality of banks divided based on a peripheral area, a plurality ofstack bank structures arranged in the banks, being spaced apart fromeach other at a predetermined interval, wherein the stack bank structureincludes a plurality of sub-banks, control blocks arranged at one sideof the stack bank structure to control all column-related signals of thesub-banks constituting the stack bank structure, and a plurality ofglobal input/output lines arranged between the stack bank structures.

According to still another aspect, a semiconductor memory apparatusincludes a plurality of banks having a plurality of word lines, and aplurality of bit lines crossing the word lines, and a peripheral areadividing the banks and providing each bank with a control signal. Onebank is divided into an up bank and a down bank, and each of the up bankand the down bank has a plurality of sub-banks arranged in a form of amatrix. Within the up and down banks, the sub-banks located at rows orcolumns parallel to an extension direction of the bit line are arrangedwhile interposing a decoding block therebetween without disconnection ofsignal lines, thereby forming stack bank structures. Control blocks areprovided at opposite sides of the stack bank structures to control bitline selection of all sub-banks constituting the stack bank structure,and a global input/output line is arranged between the control blocks tobe used for data input/output of the sub-banks constituting the stackbank structure.

According to still another aspect, a semiconductor memory apparatusincludes a plurality of stack bank structures having at least twosub-banks continuously arranged without disconnection of data signallines, a plurality of global input/output lines arranged between thestack bank structures, a share block having a predecoder and a fuse setinterposed between sub-banks in the stack bank structure, and a maindecoder interposed between the sub-bank and the share block.

According to still another aspect, a semiconductor memory apparatusincludes a pair of sub-banks constituting one bank and having aplurality of mat rows and a plurality of mat columns formed by aplurality of mats, a pair of data bus lines arranged in a space betweenthe mat rows of the sub-bank and a plurality of precharge units arrangedbetween the sub-banks and in a space between the mat columns to beelectrically connected with the data bus lines of the sub-banks.

According to still another aspect, a semiconductor memory apparatuscomprises a plurality of stack bank structures having at least twosub-banks continuously arranged without disconnection of data signallines, a plurality of global input/output lines arranged between thestack bank structures, a share block having a predecoder and a fuse setinterposed between sub-banks in the stack bank structure, a main decoderinterposed between the sub-bank and the share block, and a prechargeunit interposed between the predecoder and the fuse set in the shareblock.

These and other features, aspects, and embodiments are described belowin the section entitled “Detailed Description.”

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features and other advantages of thesubject matter of the present disclosure will be more clearly understoodfrom the following detailed description taken in conjunction with theaccompanying drawings, in which:

FIG. 1 is a plan view illustrating a conventional semiconductor memoryapparatus employing a multi-bank scheme;

FIG. 2 is an enlarged plan view illustrating one bank of thesemiconductor memory apparatus shown in FIG. 1;

FIG. 3 is a plan view illustrating a stack bank type semiconductormemory apparatus according to one embodiment;

FIG. 4 is an enlarged plan view illustrating one stack bank of thesemiconductor memory apparatus shown in FIG. 3 according to oneembodiment;

FIG. 5 is an enlarged plan view illustrating one stack bank of thesemiconductor memory apparatus shown in FIG. 3 according to anotherembodiment;

FIG. 6 is a plan view illustrating a stack bank type semiconductormemory apparatus according to another embodiment;

FIG. 7 is an enlarged plan view illustrating one stack bank of thesemiconductor memory apparatus shown in FIG. 6;

FIG. 8 is an enlarged plan view illustrating an “A” part that can beincluded in the one stack bank shown in FIG. 7;

FIG. 9 is a plan view illustrating a stack bank type semiconductormemory apparatus according to still another embodiment;

FIG. 10 is a plan view illustrating a general bank having a prechargeblock;

FIG. 11 is a timing diagram illustrating a reset interval of a localinput/output line in a conventional semiconductor memory apparatus;

FIG. 12 is a plan view illustrating a stack bank type semiconductormemory apparatus according to still another embodiment;

FIG. 13 is an enlarged plan view illustrating one stack bank of thesemiconductor memory apparatus shown in FIG. 12;

FIG. 14 is a circuit diagram illustrating a precharge unit according toan embodiment; and

FIG. 15 is a timing diagram illustrating a reset interval of a localinput/output line in a semiconductor memory apparatus according to anembodiment.

DETAILED DESCRIPTION

FIG. 3 is a diagram illustrating a semiconductor chip 100, e.g., a 512MDRAM, in accordance with one embodiment. Referring to FIG. 3, thesemiconductor chip 100 can be divided into four banks 110. Each bank 110can include a plurality of word lines, a plurality of bit lines crossingthe word lines, and a plurality of memory cells defined by the word andbit lines. In this example, it is assumed that the word and bit lines WLand BL extend in the y and x directions of FIG. 3, respectively. Aperipheral area can be made up of a first peripheral area 120 a, whichisolates the banks 110 in the x direction, and a second peripheral area120 b that isolates the banks 110 in the y direction.

Further, the second peripheral area 120 b can be divided into a centerarea CPERI and a peripheral area DPERIL. The center area CPERI can belocated at the center of the semiconductor chip 100 and can includecircuits configured to receive commands for driving the DRAM. Theperipheral area DPERIL can be located between the banks 110 to allowdata pads (not shown) to be arranged therein.

Each bank 110 can be divided into half banks, i.e., an up bank 110 u anda down bank 110 d, about a virtual half line HL. The half line HL can beparallel to the word lines. Further, each of the up bank 110 u and thedown bank 110 d can include four sub-banks 130 (B0-B3 and B4-B7), i.e.quarters. Thus, one bank 110 can include eight sub-banks 130 (B0-B7).

As shown in FIGS. 3 and 4, the semiconductor memory apparatus 100 can bedesigned such that two sub-banks 130 share one Y-control block (Y_CTRL)140. In detail, the semiconductor memory apparatus 100 can be designedsuch that the sub-banks 130 are continuously arranged in the same rows(r1 and r2 or the same columns) within one half bank 110 u or 110 d, andthe continuously arranged sub-banks 130 share one Y-control block 140without uncoupling of signal lines.

When the sub-banks 130 are continuously arranged as described above, itwill be referred to as “the sub-banks are stacked”, in which the “stack”means the status in which sub-banks different from each other have beencontinuously arranged without uncoupling or disconnection of the signallines (e.g. bit lines). Further, the row or column can be parallel tothe bit line, and the same row or column represents that the row orcolumn exists on the extension line of the same bit line. In addition,the stacked sub-banks 130 will be referred to as a stack bank structure135.

According to the present embodiment, a stack bank structure 135 caninclude two sub-banks 130. However, it will be understood that more thantwo sub-banks 130 can be included in a stack bank structure 135.

The Y-control block 140 can be located at an edge of one side of thestack bank structure 135. For example, since the Y-control block 140includes circuits for controlling a ‘Yi’ signal used for driving the bitline BL, the Y-control block 140 can be located at the edge of the stackbank structure 135 that is perpendicular to the bit line BL. TheY-control block 140 can include an address control block (not shown) andan Input/output control block (not shown). Here, the address controlblock can be a decoding block and the address control block can be acontroller of input/output sense amplifier, a read driver and a writedriver.

A plurality of global input/output lines can be arranged between theY-control blocks 140. For example, the global input/output (GIO) linescan be located adjacently to the half line that separate the up bank 110u from the down bank 110 d.

A predetermined number of global input/output (GIO) lines can beallocated to each stack bank structure 135, and the allocated globalinput/output (GIO) lines can be used for transferring data to and fromthe sub-banks 130 constituting the stack bank structure 135. Thus, ascompared with a conventional circuit in which the global input/outputlines are allowed to each sub-bank 130, in the embodiment of FIGS. 3 and4, the global input/output (GIO) lines can be allowed to each stack bankstructure 135, so that the total number of the global input/output (GIO)lines can be reduced.

In a conventional circuit, two global input/output lines have beennecessary for each sub-bank 130. In general, eight global input/outputlines at minimum have been necessary for the sub-banks 130. However, inthe embodiment of FIGS. 4 and 5, only two global input/output (GIO)lines are necessary for each stack bank structure 135. Thus, the numberof the global input/output lines can be reduced per each bank, so thatthe alignment margin for the global input/output lines can be improved.Further, since there is no need to arrange the global input/output linebetween the sub-banks 130, the size of the sub-banks 130 can beincreased without increasing the overall area of the circuit 100.

In the embodiment of FIGS. 3 and 4, two sub-banks 130 are stacked toshare one Y-control block 140. Further, the global input/output (GIO)line arranged between the sub-banks 130 is shifted and arranged betweenthe stack bank structures 135. Thus a gap between the sub-banks 130 canbe decrease.

When two sub-banks 130 are stacked in such a manner, an areacorresponding to one Y-control block 140 can be reduced, so that thearea of the sub-bank 130 can be increased by the area of one Y-controlblock 140. Further, the area needed for a Y-control block 140 can beprovided between the stack bank structures 135 that ensures enough spacefor forming the global input/output (GIO) line.

Further, since the number of global input/output (GIO) lines is reduced,the alignment margin for the global input/output (GIO) lines can beimproved. Consequently, since the alignment margin (or arrangement area)for the global input/output (GIO) lines can be ensured, the line widthof the global input/output (GIO) lines not an issue, which can preventsignal delay. Further, the spacing related to the global input/output(GIO) lines can also be sufficiently ensured, thereby preventingcrosstalk from occurring.

Meanwhile, referring to FIG. 5, in the stack bank structure 135, a partof the Y-control block 140 can be interposed between the sub-banks 130.For example, the address control block of the Y-control block 140 can beinterposed between the sub-banks 130 and the input/output control block142 of the Y-control block can be located at the edge of one side of thestack bank structure 135. The address control block can be a decodingblock 200. The input/output control block can include a controller of aninput/output sense amplifier (not shown), a read driver (not shown) anda write driver (not shown). The decoding block 200 can include a maindecoder 210 and a predecorder 220 and can decode ‘Yi’ signals of thesub-banks 130.

In general, the stacked sub-banks 130 can share one decoding block 200,similarly to manner in which one Y-control block 140 is shared. Thus,sufficient area for each decoding block 200 can be ensured. Further,since each decoding block 200 is arranged between the sub-banks 130, theefficiency of the address signal can be improved.

Further, as shown in FIGS. 6 and 7, the sub-banks 130 constituting thestack bank structure 135 can share the predecoder 220 and a fuse set230. Hereinafter, the predecoder 220 and the fuse set 230 will bereferred to as a share block 240. In detail, the main decoders 210 canbe provided between opposite edges of the sub-banks 130 constituting thestack bank structure 135, and the share block 240 can be providedbetween the main decoders 210.

As is generally known, the predecoder 220 can predecode the ‘Yi’ signalfor selecting the bit line BL, and the fuse set 230 can include a repairYi signal transmission line for repairing a defect of a Yi signaltransmission line, which occurs in the memory cells constituting thesub-banks 130.

As shown in FIG. 8, the predecoder 220 and the fuse set 230 can bealternately arranged in the share block 240, e.g., in the verticaldirection (e.g. word line extension direction). The predecoder 220 andthe fuse set 230 can be alternately arranged corresponding to mat rowsMr1 to Mr3, respectively. Such an arrangement can facilitatetransmission of the ‘Yi’ signal between the fuse set 230 and thepredecoder 220 and reduce the length of a line for transmittinginformation on a defective ‘Yi’ signal.

Conventional fuse sets are configured such that they correspond toentire mat rows. In the embodiments described herein, however, since thefuse sets 230 are selectively arranged corresponding to odd mat rows oreven mat rows, the number of the fuse sets can be reduced by a half ascompared with the number of conventional fuse sets 230. In general,since a defect of the ‘Yi’ signal does not occur relative to entire mats132 in the sub-bank 130, problems may not occur in a repair operationeven if the number of the fuse sets 230 is reduced by ½.

Further, as shown in FIG. 9, the sub-banks 130 constituting the stackbank structure 135 can simultaneously share the share block 240, whichcan include the predecoder 220 and the fuse set 230, and theInput/Output controller 142 of the Y-control block. The Input/Outputcontroller 142 of Y-control block can be arranged at the edge of thestack bank structure 135 perpendicular to the bit lines BL.

According to the embodiments described herein, the sub-banks 135 locatedon the extension line of the same bit lines can be stacked in the halfbanks 110 u and 110 d while sharing the predecoder 220 and the fuse set230. Thus, the area needed for the corresponding to the predecoder 220and the fuse set 230 can be ensured in the banks as well as the halfbanks, even in the face of increased integration.

Further, since the predecoder 220 and the fuse set 230 can bealternately arranged corresponding to the mat rows constituting thesub-bank in the share block space, mutual control signals (repair ‘Yi’signals) can be easily transmitted and thus the length of the signalline can be reduced.

Furthermore, the sub-banks can be stacked so that the globalinput/output (GIO) lines can be collected between the stack bankstructures. Thus, there is no need for ensuring a space between thesub-banks to accommodate the global input/output (GIO) lines. Inaddition, the global input/output (GIO) lines arranged corresponding tothe sub-banks can be arranged corresponding to the stack bankstructures, so that the number of the global input/output (GIO) linescan be reduced.

Moreover, as shown in FIG. 10, a conventional semiconductor memoryapparatus is designed such that one precharge controller 50 and oneprecharge block 60 are provided per sub-bank 15. In addition, theprecharge controller 50 and the precharge block 60 are positioned oneither side of the sub-bank 15, and are electrically interconnectedthrough a precharge interconnection 70. Thus, since the length of theprecharge interconnection 70 is greater than that of the sub-bank 15,serious signal skew and delay occur. In FIG. 10, reference LIO denotes alocal input/output signal line and reference LIOb denotes an invertedlocal input/output signal line.

FIG. 11 is a timing diagram illustrating a reset interval of aninput/output line when the precharge controller and the precharge blockare positioned as illustrated in FIG. 10. Referring to FIGS. 10 and 11,when the precharge controller 50 and the precharge block 60 are spacedapart from each other by the length of the sub-bank 15, since a signaltransmission path is increased, a skew may occur in a precharge controlsignal. Therefore, a reset interval (a′) of the local input/output lineLIO is narrower than a desired interval (a).

In the embodiments described herein, as shown in FIG. 12, a prechargeblock 300 can be provided between the stacked sub-banks 130. Thus, thesub-banks 130 constituting the stack bank structure 135 share oneprecharge block 300. The “stack arrangement” of the sub-banks means thatthe sub-banks 130 are continuously arranged without electricaluncoupling or disconnection of data lines, e.g. the local input/outputlines LIO and LIOb. Further, if there is no disconnection of data linesbetween sub-banks, the sub-banks can be referred to as being in a “stackarrangement” as described herein even if the sub-banks are spaced apartfrom each other at a predetermined interval. That is, if the data linesare connected with each other through a connection medium, the sub-bankscan be referred to as being in a “stack arrangement”.

The precharge block 300 can include a plurality of precharge units 310connected with the local input/output lines LIO and LIOb of the sub-bank130, respectively. A precharge controller 320 can be provided in atleast one of both sides of the precharge block 300 to receive aprecharge command from a peripheral circuit area (not shown) and thenprovide the precharge block 300 with control signals ‘LIOpcg_UP’ and‘LIOpcg_DN’. Since the precharge controller 320 is provided in at leastone of both sides of the precharge block 300, a path for receiving thecontrol signals can be significantly shortened. For example, theprecharge controller 320 can be located at the peripheral area.Consequently, the signal delay and signal skew can be reduced oreliminated.

In more detail, as shown in FIG. 13, each sub-bank 130 can have mats 115arranged in the form of a matrix including a plurality of mat rows Mr1to Mr3 and a plurality of mat columns. As will be understood, the mats115 can include a set of a plurality of word lines (not shown), aplurality of bit lines (not shown), and a plurality of memory cells. Themats 115 can be spaced apart from each other at a predeterminedinterval, and a pair of the local input/output lines LIO and LIOb can bearranged in the space between the mats 115, respectively, i.e., in thespace corresponding to the direction parallel to bit lines (not shown)constituting the mats 115.

Meanwhile, the main decoders 210 can be arranged at opposite sides ofthe sub-banks 130 to generate the column control signals (‘Yi’ signals).

Further, the predecoder 220, the fuse set 230 and the precharge unit 310can be arranged in the space between the opposite main decoders 210. Thepredecoder 220 and the fuse set 230 can be alternately arrangedcorresponding to the mat rows Mr1 to Mr3, and the precharge unit 310 canbe arranged between the predecoder 220 and the fuse set 230corresponding to the local input/output lines LIO and LIOb.

The fuse set 230 can be used for repairing a defect, which occurs in acolumn line of a corresponding mat column, and can include a first fuse(Fu) 230 a, which controls a defect of a corresponding mat row of afirst sub-bank 130 u, and a second fuse (Fd) 230 b that controls adefect of a corresponding mat row of a second sub-bank 130 d. A fusecontroller (not shown) can be interposed between the first and secondfuses 230 a and 230 b.

As described above, the precharge units 310 can be arranged between thefuses 230 a and 230 b and the predecoder 220, respectively. In detail,the precharge units 310 can be arranged in the spaces among mat rows Mr1to Mr3 in which the local input/output lines LIO and LIOb are arranged.Thus, the precharge units 310 can be connected with the localinput/output lines LIO and LIOb so that the first and second sub-banks130 u and 130 d can be stacked without substantial disconnection of thelocal input/output lines LIO and LIOb.

When the control signals ‘LIOpcg_UP’ and ‘LIOpcg_DN’ are enabled, theprecharge unit 310 can precharge the local input/output lines LIO andLIOb by using predetermined voltage, e.g., bit line precharge voltageVBLP.

For example, as shown in FIG. 14, the precharge unit 310 can includefirst to third MOS transistors N1 to N3. The first MOS transistor N1 canhave a gate for receiving the precharge control signal ‘LIOpcg_UP’ or‘LIOpcg_DN’, a source connected with the local input/output line LIOb,and a drain for receiving the bit line precharge voltage VBLP. Thesecond MOS transistor N2 can have a gate for receiving the prechargecontrol signal ‘LIOpcg_UP’ or ‘LIOpcg_DN’, a source connected with thelocal input/output line LIO, and a drain for receiving the bit lineprecharge voltage VBLP. The third MOS transistor N3 can have a gate forreceiving the precharge control signal ‘LIOpcg_UP’ or ‘LIOpcg_DN’, asource connected with the local input/output line LIOb, and a drainconnected with the local input/output line LIO.

As described above, the Input/Output controller 140 of the Y-controlblock can be located at one edge of the stack bank structure 135.

The precharge block 300 including the precharge units 310 having theafore-described construction can be arranged in the share block 240between the stacked sub-banks, so that an area corresponding to oneprecharge block 300 can be saved. Further, the precharge controller 320can be provided in at least one side of the precharge block 300, so thatthe transmission path for the precharge control signal can be reduced.

FIG. 15 is a timing chart illustrating a reset interval of the localinput/output line for the embodiments described herein.

Referring to FIG. 15, since the signal skew is significantly reduced asthe transmission path for the precharge control signal is reduced, thereset interval LIO_rst/ of the local input/output lines LIO and LIOboccupies the entire space limited to a precharge interval PCG. Thus, thereset interval of the local input/output lines LIO and LIOb can besufficiently ensured.

While certain embodiments have been described above, it will beunderstood that the embodiments described are by way of example only.Accordingly, the systems and methods described herein should not belimited based on the described embodiments. Rather, the systems andmethods described herein should only be limited in light of the claimsthat follow when taken in conjunction with the above description andaccompanying drawings.

What is claimed is:
 1. A semiconductor memory apparatus comprising: apair of sub-banks having a plurality of mat rows and a plurality of matcolumns formed by a plurality of mats; a pair of data bus lines arrangedin a space between the mat rows of each of the pair of sub-banks; aplurality of precharge units arranged between the pair of sub-bankscorresponding to a space between the plurality of mat columns to beelectrically connected with the data bus lines; and main decodersarranged at opposite sides of each of the pair of sub-banks andconfigured to generate column control signals of the mats, wherein theplurality of precharge units are arranged between the main decoders. 2.The semiconductor memory apparatus of claim 1, further comprising a fusestructure arranged at one side of each of the plurality of prechargeunits and configured to repair a defect of the plurality of mat columns,and a predecoder arranged at an opposite side of each of the pluralityof precharge units to generate the column control signals of the mats.3. The semiconductor memory apparatus of claim 2, wherein the fusestructure and the predecoder are arranged between the pair of sub-bankscorresponding to a space between the plurality of mat columns.